Modeling of deep reactive ion etching by inductively coupled plasma with string algorithm

被引：0
|
作者：
Department of Applied Physics, Hefei University of Technology, Hefei 230009, China [1 ]
机构：
来源：
Zhenkong Kexue yu Jishu Xuebao | 2008年 / 5卷 / 481-485期
关键词：
Inductively coupled plasma;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Reactive ion etching of polymer films in an oxygen inductively coupled radiofrequency-discharge plasma
    Amirov, II
    Izyumov, MO
    HIGH ENERGY CHEMISTRY, 1999, 33 (02) : 119 - 123
  • [22] Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips
    Mehedi, Hasan-Al, 1600, Wiley-VCH Verlag (211):
  • [23] Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips
    Mehedi, Hasan-al
    Mille, Vianney
    Achard, Jocelyn
    Brinza, Ovidiu
    Gicquel, Alix
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (10): : 2343 - 2346
  • [24] Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield
    Connors, Michael K.
    Missaggia, Leo J.
    Spencer, William S.
    Turner, George W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02):
  • [25] Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma
    Cha, Moon Hwan
    Lim, Eun Taek
    Park, Sung Yong
    Lee, Ji Su
    Chung, Chee Won
    VACUUM, 2020, 181
  • [26] Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
    Qiu, Rongfu
    Lu, Hai
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2700 - 2706
  • [27] Experimental evaluation of inductively coupled plasma deep silicon etching
    Xu, Gaobin
    Huang, Hua
    Zhan, Minghao
    Huang, Xiaoli
    Wang, Wenjing
    Hu, Xiao
    Chen, Xing
    Xu, G. (gbxu@hfut.edu.cn), 1600, Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China (33): : 832 - 835
  • [28] Deep silicon etching in inductively coupled plasma reactor for MEMS
    Kiihamäki, J
    Franssila, S
    PHYSICA SCRIPTA, 1999, T79 : 250 - 254
  • [29] The Effect of Inductively-Coupled-Plasma Reactive Ion Etching Power on the Etching Rate and the Surface Roughness of a Sapphire Substrate
    Chang, Chun-Ming
    Shiao, Ming-Hua
    Chiang, Donyau
    Yang, Chin-Tien
    Cheng, Chung-Ta
    Hsueh, Wen-Jeng
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (10) : 8074 - 8078
  • [30] Bias power dependence of reactive ion etching lag in contact hole etching using inductively coupled fluorocarbon plasma
    Imai, Shin-ichi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 2008 - 2012
12345