Experimental evaluation of inductively coupled plasma deep silicon etching

被引:0
|
作者
Xu, Gaobin [1 ]
Huang, Hua [1 ]
Zhan, Minghao [1 ,2 ]
Huang, Xiaoli [2 ]
Wang, Wenjing [2 ]
Hu, Xiao [1 ]
Chen, Xing [1 ]
机构
[1] Xu, Gaobin
[2] Huang, Hua
[3] 1,Zhan, Minghao
[4] Huang, Xiaoli
[5] Wang, Wenjing
[6] Hu, Xiao
[7] Chen, Xing
来源
Xu, G. (gbxu@hfut.edu.cn) | 1600年 / Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China卷 / 33期
关键词
Inductively coupled plasma;
D O I
10.3969/j.issn.1672-7126.2013.08.21
中图分类号
学科分类号
摘要
引用
收藏
页码:832 / 835
相关论文
共 50 条
  • [1] Deep silicon etching in inductively coupled plasma reactor for MEMS
    Kiihamäki, J
    Franssila, S
    PHYSICA SCRIPTA, 1999, T79 : 250 - 254
  • [2] Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system
    Chung, CK
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2004, 14 (04) : 656 - 662
  • [3] Etching through silicon wafer in inductively coupled plasma
    Franssila, S
    Kiihamäki, J
    Karttunen, J
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2000, 6 (04): : 141 - 144
  • [4] Etching through silicon wafer in inductively coupled plasma
    S. Franssila
    J. Kiihamäki
    J. Karttunen
    Microsystem Technologies, 2000, 6 : 141 - 144
  • [5] FAST ANISOTROPIC ETCHING OF SILICON IN AN INDUCTIVELY COUPLED PLASMA REACTOR
    PERRY, AJ
    BOSWELL, RW
    APPLIED PHYSICS LETTERS, 1989, 55 (02) : 148 - 150
  • [6] Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis
    Qiu, Rongfu
    Lu, Hai
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2700 - 2706
  • [7] Experimental investigation of inductively coupled plasma etching on cemented carbides
    Lian, Yunsong
    Mu, Chenliang
    Xie, Chaoping
    Yao, Bin
    VACUUM, 2019, 162 : 101 - 109
  • [8] Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source
    Matsutani, Akihiro
    Ohtsuki, Hideo
    Koyama, Fumio
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
  • [9] Proximity-controlled silicon carbide etching in inductively coupled plasma
    Kim, B
    Kim, S
    Ann, SC
    Lee, BT
    THIN SOLID FILMS, 2003, 434 (1-2) : 276 - 282
  • [10] Characteristics of silicon carbide etching using magnetized inductively coupled plasma
    Lee, H.Y., 1600, Japan Society of Applied Physics (44):