Transient injection and fast switch on in p-i-n diodes

被引：0

作者：

Mnatsakanov, T.T. ^{[1
]}

Tandoev, A.G. ^{[1
]}

Yurkov, S.N. ^{[1
]}

Levinshtein, M.E. ^{[2
]}

Ivanov, P.A. ^{[2
]}

Palmour, J.W. ^{[3
]}

机构：

[1] All-Russia Electrotechnical Institute, Krasnokazarmennaya 12, 111250 Moscow, Russia

[2] Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

[3] Cree Inc., 4600 Silicon Drive, Durham, NC 27703

来源：

Journal of Applied Physics | 2006年 / 99卷 / 07期

关键词：

Fast and ultrafast switch-on processes in p-n diodes at very high current densities j and very short current rise time τ0 have been investigated analytically. It is demonstrated that even at relatively modest values of the rate of current density rise djdt; the switch-on transient fundamentally differs from that in the classical quasineutral mode. The switch-on processes occur in modes with broken neutrality. The base resistivity is modulated by fast hole and electron waves that propagate toward each other at the maximum possible (saturation) velocities. The conditions for the appearance of fast waves have been established. Analytical expressions for the initial stage of propagation of these waves have been derived. Adequate computer simulation confirms the analytical results. © 2006 American Institute of Physics;

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