Double injection in graphene p-i-n structures

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作者：
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan [1 ]
不详 [2 ]
不详 [3 ]
机构：
[1] Ryzhii, V.
[2] Semenikhin, I.
[3] Ryzhii, M.
[4] Svintsov, D.
[5] Vyurkov, V.
[6] Satou, A.
[7] Otsuji, T.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model; we calculate the band edge profile; the spatial distributions of the quasi-Fermi energies; carrier density and velocity; and the current-voltage characteristics. In particular; we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers. © 2013 AIP Publishing LLC;
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