Double injection in graphene p-i-n structures

被引：0
|
作者：
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan [1 ]
不详 [2 ]
不详 [3 ]
机构：
[1] Ryzhii, V.
[2] Semenikhin, I.
[3] Ryzhii, M.
[4] Svintsov, D.
[5] Vyurkov, V.
[6] Satou, A.
[7] Otsuji, T.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 113期
关键词：
We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model; we calculate the band edge profile; the spatial distributions of the quasi-Fermi energies; carrier density and velocity; and the current-voltage characteristics. In particular; we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers. © 2013 AIP Publishing LLC;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Photocurrent gain in graphene-silicon p-i-n junction
    Gu, Tingyi
    Petrone, Nick
    van der Zande, Arend
    Li, Yilei
    Cheng, Austin
    Heinz, Tony F.
    Kim, Philip
    Hone, James
    Wong, Chee Wei
    Santori, Charles
    Beausoleil, Raymond
    2015 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2015,
  • [42] Injection electroluminescence from thin film p-i-n structures made from nanocrystalline hydrogenated silicon
    Andreev, AA
    Averbouch, BY
    Mavlyanov, P
    Aldabergenova, SB
    Albrecht, M
    Stenkamp, D
    Strunk, HP
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 919 - 924
  • [43] P-i-N and Schottky P-i-N diamond diodes for high power limiters
    Surdi, Harshad
    Bressler, Mason
    Ahmad, Mohammad Faizan
    Koeck, Franz
    Winters, Bryce
    Goodnick, Stephen
    Thornton, Trevor
    Nemanich, Robert J.
    Chang, Josephine
    APPLIED PHYSICS LETTERS, 2024, 124 (06)
  • [44] Interaction of powerful electromagnetic wave with integrated P-I-N structures
    Koshevaya, S
    Gutierrez, E
    Hayakawa, M
    Tecpoyotl, M
    Grimalsky, V
    Kishenko, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4332 - 4333
  • [45] ELECTRON SPIN RESONANCE IN p-i-n SILICON STRUCTURES.
    Erchak, D.P.
    Zaitsev, A.M.
    Stel'makh, V.F.
    Tkachev, V.D.
    Soviet physics. Semiconductors, 1980, 14 (01): : 79 - 82
  • [46] Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
    Terukov, EI
    Gusev, OB
    Kon'kov, OI
    Undalov, YK
    Stutzmann, M
    Janotta, A
    Mell, H
    Kleider, JP
    SEMICONDUCTORS, 2002, 36 (11) : 1240 - 1243
  • [47] Enhancement of the bandwidth of p-i-n photodiodes by utilizing tandem structures
    Kakinuma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A): : 2310 - 2311
  • [48] Impurity photovoltaic effect in p-i-n structures of undoped GaAs
    Morozova, V. A.
    Koshelev, O. G.
    Veretenkin, E. P.
    Gavrin, V. N.
    Kozlova, Yu. P.
    MOSCOW UNIVERSITY PHYSICS BULLETIN, 2009, 64 (02) : 177 - 181
  • [49] ELECTRON-SPIN RESONANCE IN P-I-N SILICON STRUCTURES
    ERCHAK, DP
    ZAITSEV, AM
    STELMAKH, VF
    TKACHEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 79 - 82
  • [50] Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
    E. I. Terukov
    O. B. Gusev
    O. I. Kon’kov
    Yu. K. Undalov
    M. Stutzmann
    A. Janotta
    H. Mell
    J. P. Kleider
    Semiconductors, 2002, 36 : 1240 - 1243
12345