Silicon carbide junction field effect transistors

被引：0

作者：

SiCED Electronics Development GmbH and Co. KG, Siemens Company, Günther-Scharowsky-Str.1, D-91052 Erlangen ^{[1
]}

机构：

来源：

Int. J. High Speed Electron. Syst. | 2006年 / 3卷 / 825-854期

关键词：

Avalanche diodes - Current voltage characteristics - Junction gate field effect transistors - MOSFET devices - Silicon carbide;

D O I：

10.1142/S012915640600403X

中图分类号：

学科分类号：

摘要：

The chapter will give an overview about the theory of JFETs with special attention to the wide band gap issues related to SiC. After a comprehensive discussion of relevant structures and topologies experimental results are presented and discussed. Especially vertical structures are in the focus of this chapter. Characteristic I-V data will be shown as well as application specific solutions regarding the temperature behavior or the ruggedness of the devices. The status of the JFETs technology will be judged and compared to alternative solutions like MOSFEts or lateral JFETs. Finally, an outlook will be given regarding targeted applications for SiC VJFETs and the resulting requirements as targets for future improvements. © World Scientific Publishing Company.

引用

共 50 条

[41] One dimensional transport in silicon nanowire junction-less field effect transistors
Mirza, Muhammad M.
Schupp, Felix J.
Mol, Jan A.
MacLaren, Donald A.
Briggs, G. Andrew D.
Paul, Douglas J.
SCIENTIFIC REPORTS, 2017, 7
[42] BURNOUT OF JUNCTION FIELD-EFFECT TRANSISTORS
LONG, DM
SWANT, DH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) : 149 - 157
[43] GATE CURRENT OF JUNCTION FIELD EFFECT TRANSISTORS
AMBROZY, A
PERIODICA POLYTECHNICA-ELECTRICAL ENGINEERING, 1970, 14 (04): : 355 - &
[44] RADIATION EFFECTS ON JUNCTION FIELD EFFECT TRANSISTORS
SHEDD, W
BUCHANAN, B
DOLAN, R
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 87 - &
[45] SILICON FIELD-EFFECT TRANSISTORS
CULLIS, R
ELECTRONIC ENGINEERING, 1965, 37 (451): : 606 - &
[46] Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors
Roe, KJ
Katulka, G
Kolodzey, J
Saddow, SE
Jacobson, D
APPLIED PHYSICS LETTERS, 2001, 78 (14) : 2073 - 2075
[47] Subthreshold current in silicon carbide buried-gate junction field-effect transistor
Ivanov, PA
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 753 - 756
[48] NEUTRON DAMAGE ANNEALING IN SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
GREGORY, BL
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) : 476 - +
[49] New pixel detector concepts based on junction field effect transistors on high resistivity silicon
Max Planck Inst, Muenchen, Germany
Nucl Instrum Methods Phys Res Sect A, 2-3 (521-528):
[50] Fabrication of Junction Field-Effect Transistors on a Flexible Substrate by Using Hydrogenated Amorphous Silicon
Lovecchio, Nicola
Caputo, Domenico
de Cesare, Giampiero
2023 9TH INTERNATIONAL WORKSHOP ON ADVANCES IN SENSORS AND INTERFACES, IWASI, 2023, : 277 - 280

← 1 2 3 4 5 →