Silicon carbide junction field effect transistors

被引：0
|
作者：
SiCED Electronics Development GmbH and Co. KG, Siemens Company, Günther-Scharowsky-Str.1, D-91052 Erlangen [1 ]
机构：
来源：
Int. J. High Speed Electron. Syst. | 2006年 / 3卷 / 825-854期
关键词：
Avalanche diodes - Current voltage characteristics - Junction gate field effect transistors - MOSFET devices - Silicon carbide;
D O I：
10.1142/S012915640600403X
中图分类号：
学科分类号：
摘要：
The chapter will give an overview about the theory of JFETs with special attention to the wide band gap issues related to SiC. After a comprehensive discussion of relevant structures and topologies experimental results are presented and discussed. Especially vertical structures are in the focus of this chapter. Characteristic I-V data will be shown as well as application specific solutions regarding the temperature behavior or the ruggedness of the devices. The status of the JFETs technology will be judged and compared to alternative solutions like MOSFEts or lateral JFETs. Finally, an outlook will be given regarding targeted applications for SiC VJFETs and the resulting requirements as targets for future improvements. © World Scientific Publishing Company.
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