Field-effect transistor with deposited graphite thin film

被引：0
|
作者：
Inokawa, Hiroshi [1 ]
Nagase, Masao [2 ]
Hirono, Shigeru [3 ]
Goto, Touichiro [2 ]
Yamaguchi, Hiroshi [2 ]
Torimitsu, Keiichi [2 ]
机构：
[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
[2] NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
[3] NTT Afty Engineering Corporation, Hachioji, Tokyo 192-0918, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
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页码：2615 / 2617
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