Field-effect transistor with deposited graphite thin film

被引：0

作者：

Inokawa, Hiroshi ^{[1
]}

Nagase, Masao ^{[2
]}

Hirono, Shigeru ^{[3
]}

Goto, Touichiro ^{[2
]}

Yamaguchi, Hiroshi ^{[2
]}

Torimitsu, Keiichi ^{[2
]}

机构：

[1] Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

[2] NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

[3] NTT Afty Engineering Corporation, Hachioji, Tokyo 192-0918, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

页码：2615 / 2617

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