Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate

被引：0
|
作者：
Bai, J. [1 ]
Wang, T. [1 ]
Comming, P. [1 ]
Parbrook, P.J. [1 ]
David, J.P.R. [1 ]
Cullis, A.G. [1 ]
机构：
[1] EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom
来源：
Journal of Applied Physics | 2006年 / 99卷 / 02期
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