Effect of High Temperature AlN Interlayer on the Performance of AlGaN/GaN Properties

被引：0
|
作者：
Xue, Junshuai [1 ]
Hao, Yue [1 ]
Zhang, Jincheng [1 ]
Ni, Jinyu [1 ]
机构：
[1] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Sch Microelect, Xian 710071, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
AlGaN/GaN heterostructure; high temperature AlN interlayer(HT-AlN interlayer); metal organic chemical vapor deposition(MOCVD);
D O I：
10.1109/EDSSC.2009.5394229
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel structure of AlGaN/GaN heterostructure which has a high temperature AlN interlayer (HT-AlN) in GaN buffer grown by metal organic chemical vapor deposition(MOCVD) on c-plane sapphire substrate has been researched. It is found that both electron mobility and sheet carrier concentration are increased by the HT-AlN interlayer compared to AlGaN/GaN heterostructure without HT-A1N interlayer. The sheet carrier concentration and Hall mobility measured by Hall increased from 1.446 x 10(13) cm(-2) and 1019 cm(2)/v.s to 1.605 x 10(13)cm(-2) and 1036 cm(2)/v.s, respectively, hence the sheet resistance decreased from 424 Omega/square to 376 Omega/square.
引用
收藏
页码：416 / 418
页数：3
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