Effect of High Temperature AlN Interlayer on the Performance of AlGaN/GaN Properties

被引：0

作者：

Xue, Junshuai ^{[1
]}

Hao, Yue ^{[1
]}

Zhang, Jincheng ^{[1
]}

Ni, Jinyu ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Sch Microelect, Xian 710071, Peoples R China

来源：

2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年

关键词：

AlGaN/GaN heterostructure; high temperature AlN interlayer(HT-AlN interlayer); metal organic chemical vapor deposition(MOCVD);

D O I：

10.1109/EDSSC.2009.5394229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel structure of AlGaN/GaN heterostructure which has a high temperature AlN interlayer (HT-AlN) in GaN buffer grown by metal organic chemical vapor deposition(MOCVD) on c-plane sapphire substrate has been researched. It is found that both electron mobility and sheet carrier concentration are increased by the HT-AlN interlayer compared to AlGaN/GaN heterostructure without HT-A1N interlayer. The sheet carrier concentration and Hall mobility measured by Hall increased from 1.446 x 10(13) cm(-2) and 1019 cm(2)/v.s to 1.605 x 10(13)cm(-2) and 1036 cm(2)/v.s, respectively, hence the sheet resistance decreased from 424 Omega/square to 376 Omega/square.

引用

页码：416 / 418

页数：3

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