Anisotropic etching in inductive plasma source with no rf biasing

被引：0
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作者：
Park, Wontaek [1 ]
机构：
[1] Guan Plasma Acceleration Laboratory, 524-2, Sang-Dong, Wonmi-Ku, Bucheon City, Kyongki-Do 420-030, Korea, Republic of
来源：
Journal of Applied Physics | 2008年 / 104卷 / 06期
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