Structural properties of silicon thin films prepared by hot-wire-assisted electron cyclotron resonance chemical vapor deposition

被引:0
|
作者
Li, Ying [1 ]
Kumeda, Minoru [1 ]
Morimoto, Akiharu [1 ]
Kawae, Takeshi [1 ]
Chen, Guanghua [2 ]
机构
[1] Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa 920-1192, Japan
[2] Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
关键词
28;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
页码:751 / 755
相关论文
共 50 条
  • [41] Formation of silicon nanocrystallites by electron cyclotron resonance chemical vapor deposition and ion beam assisted electron beam deposition
    Kim, EK
    Choi, WC
    Min, SK
    Park, CY
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 231 - 236
  • [42] Deposition of amorphous silicon films by hot-wire chemical vapor deposition
    Feenstra, KF
    Schropp, REI
    Van der Weg, WF
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6843 - 6852
  • [43] Investigation of the tantalum catalyst during the hot wire chemical vapor deposition of thin silicon films
    Grunsky, D
    Kupich, M
    Hofferberth, B
    Schroeder, B
    THIN SOLID FILMS, 2006, 501 (1-2) : 322 - 325
  • [44] Role of argon in hot wire chemical vapor deposition of hydrogenated nanocrystalline silicon thin films
    Bakr, N. A.
    Funde, A. M.
    Waman, V. S.
    Kamble, M. M.
    Hawaldar, R. R.
    Amalnerkar, D. P.
    Sathe, V. G.
    Gosavi, S. W.
    Jadkar, S. R.
    THIN SOLID FILMS, 2011, 519 (11) : 3501 - 3508
  • [45] OPTICAL CHARACTERISTICS OF AMORPHOUS-SILICON NITRIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION
    INUKAI, T
    ONO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (5A): : 2593 - 2598
  • [46] Physical properties of a-C:H films prepared by electron cyclotron resonance microwave plasma chemical vapor deposition
    Zhou, XT
    Lee, ST
    Bello, I
    Cheung, AC
    Chiu, DS
    Lam, YW
    Lee, CS
    Leung, KM
    He, XM
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 77 (03): : 229 - 234
  • [47] The electrical properties of in-situ doped polycrystalline silicon thin films grown by electron cyclotron resonance chemical vapor deposition at 250°C
    Jiang, YL
    Wang, RY
    Hwang, HL
    Yew, TR
    POLYCRYSTALLINE THIN FILMS - STRUCTURE, TEXTURE, PROPERTIES AND APPLICATIONS III, 1997, 472 : 451 - 456
  • [48] Composition and mechanical properties of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition technique
    Sah, RE
    Baumann, H
    Ohle, T
    PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS, 1997, 97 (10): : 552 - 564
  • [49] Selective deposition of polycrystalline silicon thin films at low temperature by hot-wire chemical vapor deposition
    Yu, S
    Gulari, E
    Kanicki, J
    APPLIED PHYSICS LETTERS, 1996, 68 (19) : 2681 - 2683
  • [50] Structural analysis of nanocrystalline silicon prepared by hot-wire chemical vapor deposition on polymer substrates
    Adachi, Michael M.
    Taghibakhsh, Farhad
    Kavanagh, Karen L.
    Karim, Karim S.
    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007, 2007, 989 : 517 - +