Microstructures and photo-electric characteristics of phosphorus-doped hydrogenated silicon films

被引：0
|
作者：
Chen, Yongsheng [1 ]
Wang, Shengzhao [1 ]
Yang, Shi-E [1 ]
Gao, Xiaoyong [1 ]
Lu, Jingxiao [1 ]
机构：
[1] Key Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052, China
来源：
Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2006年 / 26卷 / 01期
关键词：
Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：8 / 11
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