Materials and devices for reduced switching field toggle magnetic random access memory

被引：0
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作者：
Worledge, D.C. [1 ]
Trouilloud, P.L. [1 ]
Gaidis, M.C. [1 ]
Lu, Y. [1 ]
Abraham, D.W. [1 ]
Assefa, S. [1 ]
Brown, S. [1 ]
Galligan, E. [1 ]
Kanakasabapathy, S. [1 ]
Nowak, J. [1 ]
O'Sullivan, E. [1 ]
Robertazzi, R. [1 ]
Wright, G. [1 ]
Gallagher, W.J. [1 ]
机构：
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
来源：
Journal of Applied Physics | 2006年 / 100卷 / 07期
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