Materials and devices for reduced switching field toggle magnetic random access memory

被引：0

作者：

Worledge, D.C. ^{[1
]}

Trouilloud, P.L. ^{[1
]}

Gaidis, M.C. ^{[1
]}

Lu, Y. ^{[1
]}

Abraham, D.W. ^{[1
]}

Assefa, S. ^{[1
]}

Brown, S. ^{[1
]}

Galligan, E. ^{[1
]}

Kanakasabapathy, S. ^{[1
]}

Nowak, J. ^{[1
]}

O'Sullivan, E. ^{[1
]}

Robertazzi, R. ^{[1
]}

Wright, G. ^{[1
]}

Gallagher, W.J. ^{[1
]}

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

Journal of Applied Physics | 2006年 / 100卷 / 07期

关键词：

D O I：

暂无

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学科分类号：

摘要：

Journal article (JA)

引用

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