Silicon carbonitride thin-film coatings fabricated by remote hydrogen-nitrogen microwave plasma chemical vapor deposition from a single-source precursor: Growth process, structure, and properties of the coatings

被引：0

作者：

Wrobel, A.M. ^{[1
]}

Blaszczyk-Lezak, I. ^{[1
]}

Walkiewicz-Pietrzykowska, A. ^{[1
]}

机构：

[1] Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz, Poland

来源：

Journal of Applied Polymer Science | 2007年 / 105卷 / 01期

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摘要：

Journal article (JA)

引用

页码：122 / 129

共 40 条

[31] Remote hydrogen microwave plasma CVD of silicon carbonitride films from a tetramethyldisilazane source. Part 2: Compositional and structural dependencies of film properties
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[33] Growth of semiconducting iron sulfide thin films by chemical vapor deposition from air-stable single-source metal organic precursor for photovoltaic application
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[34] EPITAXIAL-GROWTH OF LITHIUM-NIOBATE THIN-FILMS FROM A SINGLE-SOURCE ORGANOMETALLIC PRECURSOR USING METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[35] Remote hydrogen microwave plasma chemical vapor deposition from methylsilane precursors. 1. Growth mechanism and chemical structure of deposited a-SiC:H films
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[36] Remote hydrogen plasma chemical vapor deposition from (dimethylsilyl)(trimethylsilyl)methane.: 1.: Kinetics of the process;: Chemical and morphological structure of deposited silicon-carbon films
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Walkiewicz-Pietrzykowska, A
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[37] Role of seed crystal layer in two-step-growth procedure for low temperature growth of polycrystalline silicon thin film from SiF4 by a remote-type microwave plasma enhanced chemical vapor deposition
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Ro, Kazuyoshi
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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (10): : 5762 - 5767
[38] Role of seed crystal layer in two-step-growth procedure for low temperature growth of polycrystalline silicon thin film from SiF4 by a remote-type microwave plasma enhanced chemical vapor deposition
Kamiya, T
Ro, K
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Shimizu, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (10): : 5762 - 5767
[39] Growth Mechanism and Chemical Structure of Amorphous Hydrogenated Silicon Carbide (a-SiC:H) Films Formed by Remote Hydrogen Microwave Plasma CVD From a Triethylsilane Precursor: Part 1
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[40] EFFECTS OF NH3 AND N2 SOURCE GASES AND PLASMA EXCITATION FREQUENCIES ON THE REACTION CHEMISTRY FOR SI3N4 THIN-FILM GROWTH BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
THEIL, JA
HATTANGADY, SV
LUCOVSKY, G
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 719 - 727

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