The experimental study and analysis of the etching for SiO2 sacrificial layer

被引：0
|
作者：
Key Lab. of Micro and Nano Electromechanical Systems of Shanxi Province, Northwestern Polytechnical University, Xi'an 710072, China [1 ]
机构：
来源：
Yadian Yu Shengguang | 2008年 / 3卷 / 372-375期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] GATE SIO2 BREAKDOWN ANALYSIS IN PLASMA-ETCHING
    MITSUHASHI, T
    KANAMARI, J
    SOGOH, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : C226 - C226
  • [12] SELECTIVE ETCHING OF SIO2 ON SI
    ITOGA, M
    INOUE, M
    KITAHARA, Y
    BAN, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C284 - C284
  • [13] A molecular dynamics investigation of fluorocarbon based layer-by-layer etching of silicon and SiO2
    Rauf, S.
    Sparks, T.
    Ventzek, P. L. G.
    Smirnov, V. V.
    Stengach, A. V.
    Gaynullin, K. G.
    Pavlovsky, V. A.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (03)
  • [14] IMPURITY CONTAMINATION OF THE SIO2 LAYER ON SI WAFERS DURING ION ETCHING
    HOSAKA, S
    KAWAMOTO, Y
    HASHIMOTO, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 17 - 22
  • [15] A STUDY OF CONTAMINATION DURING REACTIVE ION ETCHING OF SIO2
    VALENTE, M
    QUEIROLO, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) : 1132 - 1135
  • [16] Evaluation of SiO2 films and SiO2/Si interfaces by graded etching
    Muraji, Y
    Yoshikawa, K
    Nakamura, M
    Nakagawa, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A): : 805 - 809
  • [17] Evaluation of SiO2 films and SiO2/Si interfaces by graded etching
    Muraji, Yuichi
    Yoshikawa, Kazuhiro
    Nakamura, Masakazu
    Nakagawa, Yoshitsugu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 A): : 805 - 809
  • [18] An experimental study of properties of ultrathin Si layer with bonded Si/SiO2 interfacel
    Naumova, O.
    Fomin, B.
    Popov, V.
    Strelchuk, V.
    Nikolenko, A.
    Nazarov, A.
    FUNCTIONAL NANOMATERIALS AND DEVICES VII, 2014, 854 : 3 - +
  • [19] SOI planar photonic crystal fabrication:: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas
    Milenin, AP
    Jamois, C
    Geppert, T
    Gösele, U
    Wehrspohn, RB
    MICROELECTRONIC ENGINEERING, 2005, 81 (01) : 15 - 21
  • [20] Study of etching rate with sacrificial layer's thickness in nanometer
    Department of Information Science, Electronic Engineering Zhejiang University, Hangzhou 310027, China
    Chin. J. Sens. Actuators, 2006, 2 (277-280):
12345