Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals

被引：0

作者：

Podhorodecki, A. ^{[1
]}

Zatryb, G. ^{[1
]}

Misiewicz, J. ^{[1
]}

Wojcik, J. ^{[2
]}

Mascher, P. ^{[2
]}

机构：

[1] Institute of Physics, Wroclaw University of Technology, Wybrzee Wyspiańskiego 27, 50-370 Wroclaw, Poland

[2] Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada

来源：

Journal of Applied Physics | 2007年 / 102卷 / 04期

关键词：

Silicon nanocrystals embedded in a silicon-rich silicon-oxide matrix have been fabricated at different silicon contents (38%; 40%; and 49%) using plasma-enhanced chemical vapor deposition and annealing at different temperatures in the range from 900 °C to 1100 °C. Their optical properties have been investigated by photoluminescence and transmittance measurements. Strong; room-temperature emission bands at ∼1.6 eV have been observed for all samples; with intensities dependent on the annealing temperature and Si content of the samples. From transmittance measurements; a redshift of the absorption edge has been detected when increasing the annealing temperature or Si content. © 2007 American Institute of Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[31] Growth of silicon carbide surface nanocrystals on silicon under high-temperature vacuum annealing
Hopf, T.
Leveneur, J.
Markwitz, A.
VACUUM, 2011, 86 (02) : 165 - 170
[32] Influence of temperature and concentration on tribological properties of silicon nitride in glycerol aqueous solution
Zhou, Xiaoxue
Lin, Bin
Yan, Shuai
Wang, Anying
Zhang, Xiaofeng
Ge, Shidong
CERAMICS INTERNATIONAL, 2016, 42 (03) : 3786 - 3796
[33] Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices
Lopez-Vidrier, J.
Hernandez, S.
Hiller, D.
Gutsch, S.
Lopez-Conesa, L.
Estrade, S.
Peiro, F.
Zacharias, M.
Garrido, B.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)
[34] Nonlinear optical properties of silicon nanoclusters/nanocrystals doped SiO2 films: Annealing temperature dependence
Ito, Masahiko
Imakita, Kenji
Fujii, Minoru
Hayashi, Shinji
JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
[35] Charging properties of Si nanocrystals with respect to the varied temperature
Yang, H.
Sung, S. Y.
Choi, Y. J.
Kim, J. W.
Kim, Y. S.
Kang, C. J.
MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 2007, : 246 - +
[36] Visible light emission from Si nanocrystals grown by ion implantation and subsequent annealing
Guha, S
Pace, MD
Dunn, DN
Singer, IL
APPLIED PHYSICS LETTERS, 1997, 70 (10) : 1207 - 1209
[37] Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures
Torres, I.
Vetter, M.
Ferre-Borrull, J.
Marsal, L. F.
Orpella, A.
Alcubilla, R.
Pallares, J.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2): : 36 - 39
[38] Charge storage and electron/light emission properties of silicon nanocrystals
Oda, S.
Huang, S. Y.
Salem, M. A.
Hippo, D.
Mizuta, H.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2): : 59 - 63
[39] Influence of nanocrystal size on the transport properties of Si nanocrystals
Zhou, Xin
Usami, Kouichi
Rafiq, M.A.
Tsuchiya, Yoshishige
Mizuta, Hiroshi
Oda, Shunri
1600, American Institute of Physics Inc. (104):
[40] Silicon nanocrystals from high-temperature annealing: Characterization on device level
Loeper, Philipp
Canino, Mariaconcetta
Lopez-Vidrier, Julian
Schnabel, Manuel
Schindler, Florian
Heinz, Friedemann
Witzky, Anke
Bellettato, Michele
Allegrezza, Marco
Hiller, Daniel
Hartel, Andreas
Gutsch, Sebastian
Hernandez, Sergi
Guerra, Roberto
Ossicini, Stefano
Garrido, Blas
Janz, Stefan
Zacharias, Margit
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (04): : 669 - 675

← 1 2 3 4 5 →