Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals

被引：0
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作者：
Podhorodecki, A. [1 ]
Zatryb, G. [1 ]
Misiewicz, J. [1 ]
Wojcik, J. [2 ]
Mascher, P. [2 ]
机构：
[1] Institute of Physics, Wroclaw University of Technology, Wybrzee Wyspiańskiego 27, 50-370 Wroclaw, Poland
[2] Centre for Emerging Device Technologies, Department of Engineering Physics, McMaster University, Hamilton, Ont. L8S 4L7, Canada
来源：
Journal of Applied Physics | 2007年 / 102卷 / 04期
关键词：
Silicon nanocrystals embedded in a silicon-rich silicon-oxide matrix have been fabricated at different silicon contents (38%; 40%; and 49%) using plasma-enhanced chemical vapor deposition and annealing at different temperatures in the range from 900 °C to 1100 °C. Their optical properties have been investigated by photoluminescence and transmittance measurements. Strong; room-temperature emission bands at ∼1.6 eV have been observed for all samples; with intensities dependent on the annealing temperature and Si content of the samples. From transmittance measurements; a redshift of the absorption edge has been detected when increasing the annealing temperature or Si content. © 2007 American Institute of Physics;
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