Surface reactions during etching of organic low- k films by plasmas of N2 and H2

被引:0
|
作者
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan [1 ]
不详 [2 ]
不详 [3 ]
机构
来源
Journal of Applied Physics | 2006年 / 99卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] ON THE INTERACTIONS BETWEEN H2 AND N2 PLASMAS AND GaAs (100) SURFACE CHEMICAL AND ELECTRONIC PROPERTIES.
    Friedel, P.
    Gourrier, S.
    Vide, les Couches Minces, 1983, 38 (216): : 141 - 143
  • [22] Experimental and Numerical Study of Supersonic Jets of N2, H2, and N2 + H2 Mixtures
    Skovorodko, P. A.
    Ramos, A.
    Tejeda, G.
    Fernandez, J. M.
    Montero, S.
    28TH INTERNATIONAL SYMPOSIUM ON RAREFIED GAS DYNAMICS 2012, VOLS. 1 AND 2, 2012, 1501 : 1228 - 1235
  • [23] Equilibrium composition of H2, O2 and N2 plasmas in thermal disequilibrium
    Koalaga, Z
    CANADIAN JOURNAL OF PHYSICS, 2003, 81 (09) : 1095 - 1108
  • [24] Ion chemistry in cold plasmas of H2 with CH4 and N2
    Tanarro, I.
    Herrero, V. J.
    Islyaikin, A. M.
    Mendez, I.
    Tabares, F. L.
    Tafalla, D.
    JOURNAL OF PHYSICAL CHEMISTRY A, 2007, 111 (37): : 9003 - 9012
  • [25] Pressure-induced chemical reactions in the N2(H2)2 compound: from the N2 and H2 species to ammonia and back down into hydrazine
    Laniel, D.
    Svitlyk, V.
    Weck, G.
    Loubeyre, P.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (06) : 4050 - 4057
  • [26] Ammonia formation in N2/H2 plasmas on ITER-relevant plasma facing materials: Surface temperature and N2 plasma content effects
    de Castro, A.
    Alegre, D.
    Tabares, F. L.
    JOURNAL OF NUCLEAR MATERIALS, 2015, 463 : 676 - 679
  • [27] InN films prepared by sputtering in N2 and H2 - effects of H2 pressure on film properties
    Saito, Nobuo
    Igasaki, Yasuhiro
    2000, Nihon Shinku Kyokai, Tokyo, Japan (43):
  • [28] Reduction of N2 with H2 on palladium surfaces at low temperatures
    Murakami, Junichi
    Futamata, Masayuki
    Nakao, Yukimichi
    Horiuchi, Shin
    Bando, Kyoko
    Nagashima, Umpei
    Yoshimura, Kazuki
    CHEMICAL PHYSICS LETTERS, 2015, 618 : 1 - 5
  • [29] Processing and properties of a low-fire, high-k dielectric in H2/N2
    Guan, Minxin
    Tseng, Fu-Ning
    Jean, Jau-Ho
    CERAMICS INTERNATIONAL, 2017, 43 : S270 - S273
  • [30] H2/N2 Plasma Etching Rate of Carbon Films Deposited by H-Assisted Plasma Chemical Vapor Deposition
    Urakawa, Tatsuya
    Torigoe, Ryuhei
    Matsuzaki, Hidefumi
    Yamashita, Daisuke
    Uchida, Giichiro
    Koga, Kazunori
    Shiratani, Masaharu
    Setsuhara, Yuichi
    Takeda, Keigo
    Sekine, Makoto
    Hori, Masaru
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (01)