Electronic and vibrational excitations on the surface of the three-dimensional topological insulator Bi2Te3-xSex (x=0,2,3)

被引:1
|
作者
Lee A.C. [1 ]
Kung H.-H. [1 ,4 ]
Wang X. [1 ,2 ]
Cheong S.-W. [1 ,2 ]
Blumberg G. [1 ,3 ]
机构
[1] Department of Physics & Astronomy, Rutgers University, Piscataway, 08854, NJ
[2] Rutgers Center for Emergent Materials, Rutgers University, Piscataway, 08854, NJ
[3] National Institute of Chemical Physics and Biophysics, Tallinn
[4] Quantum Matter Institute, University of British Columbia, Vancouver, V6T 1Z4, BC
基金
欧盟地平线“2020”; 欧洲研究理事会; 美国国家科学基金会;
关键词
Bulk counterpart - Electronic excitation - Incident photon energy - Resonant Raman - Resonant Raman Spectroscopy - Spectral intensity - Surface phonon - Surface phonon mode - Topological insulators - Vibrational excitation;
D O I
10.1103/PhysRevB.108.174301
中图分类号
学科分类号
摘要
We study surface states in the three-dimensional topological insulators Bi2Te3-xSex (x=0,2,3) by polarization resolved resonant Raman spectroscopy. By tracking the spectral intensity of the surface phonon modes with respect to the incident photon energy, we show that the surface phonons are qualitatively similar to their bulk counterparts. Using the resonant Raman excitation profile, we estimated the energy gaps between the surface conduction bands and the bulk conduction bands. In addition, we selectively excite the surface-to-bulk electronic continuum near the Fermi energy in Bi2Se3 to determine the strength of Fano interaction between the most prominent surface phonon and the surface-to-bulk continuum. © 2023 American Physical Society.
引用
收藏
相关论文
共 50 条
  • [31] Polarization dependence of coherent phonon generation and detection in the three-dimensional topological insulator Bi2Te3
    Misochko, O. V.
    Flock, J.
    Dekorsy, T.
    PHYSICAL REVIEW B, 2015, 91 (17)
  • [32] STRENGTH CHARACTERISTICS AND YOUNG MODULUS OF CRYSTALS OF THE BI2TE3-XSEX (X = 0-0.9) SOLID-SOLUTION
    CHIZHEVSKAYA, SN
    FEDOTOV, SG
    GEMINOV, VN
    KOPEV, IM
    MAKSIMOVA, NM
    INORGANIC MATERIALS, 1989, 25 (07) : 920 - 922
  • [33] FEATURES OF DEFORMATION AND FRACTURE OF THE DOPED SOLID-SOLUTIONS BI2TE3-XSEX (X = 0, 0.12, 0.15, 0.6)
    CHIZHEVSKAYA, SN
    SHELIMOVA, LE
    INORGANIC MATERIALS, 1992, 28 (10-11) : 1674 - 1681
  • [34] Properties of Sn-doped Bi2Te3-xSex single crystals
    Svechnikova, TE
    Zemskov, VS
    Zhitinskaya, MK
    Nemov, SA
    Polikarpova, NV
    Müller, E
    Platzek, D
    INORGANIC MATERIALS, 2006, 42 (02) : 101 - 107
  • [35] TEMPERATURE DEPENDENCE EFFECTIVE MASS AND ELECTRON MOBILITY IN BI2TE3-XSEX
    GOLTSMAN, BM
    LUKYANOV.LN
    KUTASOV, VA
    FIZIKA TVERDOGO TELA, 1972, 14 (04): : 1013 - &
  • [36] CARRIER SCATTERING ANISOTROPY IN BI2TE3-XSEX AND BI2-YINYTE3 SOLID-SOLUTIONS
    KUTASOV, VA
    LUKYANOVA, LN
    FIZIKA TVERDOGO TELA, 1990, 32 (02): : 488 - 492
  • [37] Dislocation and microindentation analysis of vapour grown Bi2Te3-xSex whiskers
    Kunjomana, A. G.
    Chandrasekharan, K. A.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2008, 43 (06) : 594 - 598
  • [38] Landau Level Broadening in the Three-Dimensional Topological Insulator Sb2Te3
    Storz, Oliver
    Sessi, Paolo
    Wilfert, Stefan
    Dirker, Chris
    Bathon, Thomas
    Kokh, Konstantin
    Tereshchenko, Oleg
    Bode, Matthias
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018, 12 (11):
  • [39] Quasiparticle interference on the surface of the topological insulator Bi2Te3
    Lee, Wei-Cheng
    Wu, Congjun
    Arovas, Daniel P.
    Zhang, Shou-Cheng
    PHYSICAL REVIEW B, 2009, 80 (24)
  • [40] INFLUENCE OF SB2SE3 ON THE THERMOELECTRICAL PROPERTIES OF ALLOYS BI2TE3-XSEX(X=0.12OR0.6)
    CHIZHEVSKAYA, SN
    STARK, NK
    INORGANIC MATERIALS, 1980, 16 (06) : 689 - 690