Electronic and vibrational excitations on the surface of the three-dimensional topological insulator Bi2Te3-xSex (x=0,2,3)

被引：1

作者：

Lee A.C. ^{[1
]}

Kung H.-H. ^{[1
,4
]}

Wang X. ^{[1
,2
]}

Cheong S.-W. ^{[1
,2
]}

Blumberg G. ^{[1
,3
]}

机构：

[1] Department of Physics & Astronomy, Rutgers University, Piscataway, 08854, NJ

[2] Rutgers Center for Emergent Materials, Rutgers University, Piscataway, 08854, NJ

[3] National Institute of Chemical Physics and Biophysics, Tallinn

[4] Quantum Matter Institute, University of British Columbia, Vancouver, V6T 1Z4, BC

来源：

Physical Review B | 2023年 / 108卷 / 17期

基金：

欧盟地平线“2020”; 欧洲研究理事会; 美国国家科学基金会;

关键词：

Bulk counterpart - Electronic excitation - Incident photon energy - Resonant Raman - Resonant Raman Spectroscopy - Spectral intensity - Surface phonon - Surface phonon mode - Topological insulators - Vibrational excitation;

D O I：

10.1103/PhysRevB.108.174301

中图分类号：

学科分类号：

摘要：

We study surface states in the three-dimensional topological insulators Bi2Te3-xSex (x=0,2,3) by polarization resolved resonant Raman spectroscopy. By tracking the spectral intensity of the surface phonon modes with respect to the incident photon energy, we show that the surface phonons are qualitatively similar to their bulk counterparts. Using the resonant Raman excitation profile, we estimated the energy gaps between the surface conduction bands and the bulk conduction bands. In addition, we selectively excite the surface-to-bulk electronic continuum near the Fermi energy in Bi2Se3 to determine the strength of Fano interaction between the most prominent surface phonon and the surface-to-bulk continuum. © 2023 American Physical Society.

引用

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