Low-temperature fabrication technologies of Si solar cell by sputter epitaxy method

被引:0
|
作者
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo [1 ]
184-8588, Japan
机构
来源
关键词
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I
08KD01
中图分类号
学科分类号
摘要
Energy conversion efficiency - Temperature - Magnetron sputtering - Silicon solar cells - Fabrication - Fluorine compounds - Silicon
引用
收藏
相关论文
共 50 条
  • [41] PHOTOENHANCEMENT IN LOW-TEMPERATURE SILICON EPITAXY
    ITO, T
    YAMAZAKI, T
    WATANABE, S
    NARA, Y
    ISHIKAWA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C132 - C132
  • [42] SILICON SELECTIVE EPITAXY AT LOW-TEMPERATURE
    KAWAMURA, M
    IKEDA, T
    OGIRIMA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C391 - C391
  • [43] Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell
    Yamamoto, K
    Suzuki, T
    Yoshimi, M
    Nakajima, A
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 661 - 664
  • [44] Low-temperature fabrication of microcrystalline silicon and its application to solar cells
    Kondo, M
    Nasuno, Y
    Mase, H
    Wada, T
    Matsuda, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 : 108 - 112
  • [45] Low-temperature perovskites thin films solar cell
    Zawadzka, Anna
    Marjanowska, Agnieszka
    Laouid, Amina
    Wisniewski, Krzysztof
    Zawadzki, Michal
    Plocennik, Przemyslaw
    2024 24TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, ICTON 2024, 2024,
  • [46] CLEANING AND PASSIVATION OF THE SI(100) SURFACE BY LOW-TEMPERATURE REMOTE HYDROGEN PLASMA TREATMENT FOR SI EPITAXY
    HSU, T
    ANTHONY, B
    QIAN, R
    IRBY, J
    BANERJEE, S
    TASCH, A
    LIN, S
    MARCUS, H
    MAGEE, C
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (03) : 279 - 287
  • [47] Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers
    Shvets, V. A.
    Azarov, I. A.
    Rykhlitskii, S. V.
    Toropov, A. I.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2019, 55 (01) : 8 - 15
  • [48] Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers
    V. A. Shvets
    I. A. Azarov
    S. V. Rykhlitskii
    A. I. Toropov
    Optoelectronics, Instrumentation and Data Processing, 2019, 55 : 8 - 15
  • [49] Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy
    Vilisova, MD
    Kunitsyn, AE
    Lavrent'eva, LG
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Toropov, SE
    Chaldyshev, VV
    SEMICONDUCTORS, 2002, 36 (09) : 953 - 957
  • [50] HYDROGEN-INDUCED BREAKDOWN OF LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF SI
    ASOKAKUMAR, P
    SZPALA, S
    NIELSEN, B
    SZELES, C
    LYNN, KG
    LANFORD, WA
    SHEPARD, CA
    GOSSMANN, HJ
    PHYSICAL REVIEW B, 1995, 51 (07): : 4630 - 4632