Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips

被引:0
|
作者
机构
[1] Mehedi, Hasan-Al
[2] Mille, Vianney
[3] Achard, Jocelyn
[4] Brinza, Ovidiu
[5] Gicquel, Alix
来源
Mehedi, Hasan-Al | 1600年 / Wiley-VCH Verlag卷 / 211期
关键词
Aspect ratio - Electron beam lithography - Fabrication - Ions - Single crystals - Nanotips - Diamonds - Inductively coupled plasma - Plasma etching;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Inductively coupled plasma reactive ion etching of GeSbTe thin films in a HBr/Ar gas
    Lee, Jang Woo
    Cho, Han Na
    Min, Su Ryun
    Chung, Chee Won
    INTEGRATED FERROELECTRICS, 2007, 90 : 95 - 106
  • [42] Reactive ion etching of polymer films in an oxygen inductively coupled radiofrequency-discharge plasma
    Amirov, II
    Izyumov, MO
    HIGH ENERGY CHEMISTRY, 1999, 33 (02) : 119 - 123
  • [43] Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield
    Connors, Michael K.
    Missaggia, Leo J.
    Spencer, William S.
    Turner, George W.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02):
  • [44] Single crystal diamond polishing assisted by inductively coupled plasma etching
    Yu, Jiarong
    Liu, Xinyue
    Xu, Rongbin
    Yu, Daquan
    DIAMOND AND RELATED MATERIALS, 2025, 152
  • [45] Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma
    Cha, Moon Hwan
    Lim, Eun Taek
    Park, Sung Yong
    Lee, Ji Su
    Chung, Chee Won
    VACUUM, 2020, 181
  • [46] Bias power dependence of reactive ion etching lag in contact hole etching using inductively coupled fluorocarbon plasma
    Imai, Shin-ichi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 2008 - 2012
  • [47] Etching and micro-optics fabrication in diamond using chlorine-based inductively-coupled plasma
    Lee, C. L.
    Gu, E.
    Dawson, M. D.
    Friel, I.
    Scarsbrook, G. A.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (7-10) : 1292 - 1296
  • [48] Inductively coupled plasma etching of SiC for power switching device fabrication
    Cao, L
    Li, B
    Zhao, JH
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 833 - 836
  • [49] Inductively Coupled Plasma etching of Germanium Tin for the fabrication of photonic components
    Milord, L.
    Aubin, J.
    Gassenq, A.
    Tardif, S.
    Guilloy, K.
    Pauc, N.
    Rothman, J.
    Chelnokov, A.
    Hartmann, J. M.
    Calvo, V.
    Reboud, V.
    SILICON PHOTONICS XII, 2017, 10108
  • [50] Fabrication of AlGaN-based waveguides by inductively coupled plasma etching
    Li, N
    Waki, I
    Kumtornkittikul, C
    Liang, JH
    Sugiyama, M
    Shimogaki, Y
    Nakano, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (10B): : L1340 - L1342