Processing, characterization and modeling of AlGaN/GaN HEMTs

被引:0
|
作者
Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, SE-41296 Gothenburg, Sweden [1 ]
机构
来源
Doktorsavh. Chalmers Tek. Hogsk. | 2006年 / 2416卷 / 1-64期
关键词
High electron mobility transistors;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
    Pavlidis, Georges
    Pavlidis, Spyridon
    Heller, Eric R.
    Moore, Elizabeth A.
    Vetury, Ramakrishna
    Graham, Samuel
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (01) : 78 - 83
  • [32] Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon
    Kuzmík, J
    Bychikhin, S
    Neuburger, M
    Dadgar, A
    Krost, A
    Kohn, E
    Pogany, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (08) : 1698 - 1705
  • [33] Physics-based Analytical Modeling of p-GaN/AlGaN/GaN HEMTs
    Bhat, Zarak
    Ahsan, Sheikh Aamir
    2022 IEEE 19TH INDIA COUNCIL INTERNATIONAL CONFERENCE, INDICON, 2022,
  • [34] Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances
    杜江锋
    徐鹏
    王康
    尹成功
    刘洋
    冯志红
    敦少博
    于奇
    Journal of Semiconductors, 2015, 36 (03) : 92 - 95
  • [35] Modeling of AlGaN/GaN HEMTs using Field-Plate Technology
    Kaddeche, M.
    Telia, A.
    Soltani, A.
    2009 3RD INTERNATIONAL CONFERENCE ON SIGNALS, CIRCUITS AND SYSTEMS (SCS 2009), 2009, : 254 - +
  • [36] Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances
    Du Jiangfeng
    Xu Peng
    Wang Kang
    Yin Chenggong
    Liu Yang
    Feng Zhihong
    Dun Shaobo
    Yu Qi
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (03)
  • [37] Analytical Modeling of the Temperature Dependent Microwave Noise in AlGaN/GaN HEMTs
    Liu, Z. H.
    Ng, G. I.
    Arulkumaran, S.
    2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY: SYNERGY OF RF AND IC TECHNOLOGIES, PROCEEDINGS, 2009, : 276 - 279
  • [38] Analytical Modeling of the Temperature Dependent Microwave Noise in AlGaN/GaN HEMTs
    Liu, Z. H.
    Ng, G. I.
    Arulkumaran, S.
    2009 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT 2009), 2009, : 158 - +
  • [39] ELECTRICAL AND THERMAL MODELING OF AlGaN/GaN HEMTS ON DIAMOND SILICON SUBSTRATES
    McGlone, D.
    Weatherford, T.
    Gillespie, J.
    Via, G.
    Zimmer, J.
    2008 ROCS WORKSHOP, PROCEEDINGS, 2008, : 3 - +
  • [40] Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances
    杜江锋
    徐鹏
    王康
    尹成功
    刘洋
    冯志红
    敦少博
    于奇
    Journal of Semiconductors, 2015, (03) : 92 - 95