Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

被引：0

作者：

杜江锋 ^{[1
]}

徐鹏 ^{[2
]}

王康 ^{[1
]}

尹成功 ^{[1
]}

刘洋 ^{[1
]}

冯志红 ^{[2
]}

敦少博 ^{[2
]}

于奇 ^{[1
]}

机构：

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

[2] Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute

来源：

Journal of Semiconductors | 2015年 / 03期

基金：

中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;

关键词：

AlGaN/GaN HEMT; coplanar waveguide effect; modeling; small signal; S-parameters;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

Given the coplanar waveguide(CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S-parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.

引用

页码：92 / 95

页数：4

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