Study on the electronic structures and energy band properties of Al-doped β-Ga2O3

被引：0
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作者：
机构：
[1] Zheng, Shu-Wen
[2] Fan, Guang-Han
[3] Pi, Hui
来源：
Zheng, S.-W. (LED@scnu.edu.cn) | 1600年 / Journal of Functional Materials卷 / 45期
关键词：
Electronic structure;
D O I：
10.3969/j.issn.1001-9731.2014.12.020
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