Study on the electronic structures and energy band properties of Al-doped β-Ga2O3

被引：0
|
作者：
机构：
[1] Zheng, Shu-Wen
[2] Fan, Guang-Han
[3] Pi, Hui
来源：
Zheng, S.-W. (LED@scnu.edu.cn) | 1600年 / Journal of Functional Materials卷 / 45期
关键词：
Electronic structure;
D O I：
10.3969/j.issn.1001-9731.2014.12.020
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass*
    Wang, Xia
    Gu, Wei-Fang
    Qiao, Yong-Feng
    Feng, Zhi-Yong
    An, Yue-Hua
    Zhang, Shao-Hui
    Liu, Zeng
    CHINESE PHYSICS B, 2021, 30 (11)
  • [32] The electronic structure of ε-Ga2O3
    Mulazzi, M.
    Reichmann, F.
    Becker, A.
    Klesse, W. M.
    Alippi, P.
    Fiorentini, V.
    Parisini, A.
    Bosi, M.
    Fornari, R.
    APL MATERIALS, 2019, 7 (02):
  • [33] Electronic Structure of Tungsten-Doped β-Ga2O3 Compounds
    Zade, Vishal
    Mallesham, B.
    Roy, Swadipta
    Shutthanandan, V.
    Ramana, C. V.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (07) : Q3111 - Q3115
  • [34] The electronic structure and magnetic property of the Mn doped β-Ga2O3
    Wang, Xiaolong
    Quhe, Ruge
    Zhi, Yusong
    Liu, Zeng
    Huang, Yuanqi
    Dai, Xianqi
    Tang, Yanan
    Wu, Zhenping
    Tang, Weihua
    SUPERLATTICES AND MICROSTRUCTURES, 2019, 125 : 330 - 337
  • [35] Ga2O3 nanoribbons:: Synthesis, characterization, and electronic properties
    Fu, L
    Liu, YQ
    Hu, P
    Xiao, K
    Yu, G
    Zhu, DB
    CHEMISTRY OF MATERIALS, 2003, 15 (22) : 4287 - 4291
  • [36] First Principles Calculation of Band Offsets and Defect Energy Levels in Al2O3/β-Ga2O3 Interface Structures with Point Defects
    Park, Junsung
    Hong, Sung-Min
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (04) : 413 - 425
  • [37] Energy band line-up of atomic layer deposited Al2O3 on β-Ga2O3
    Hung, Ting-Hsiang
    Sasaki, Kohei
    Kuramata, Akito
    Nath, Digbijoy N.
    Park, Pil Sung
    Polchinski, Craig
    Rajan, Siddharth
    APPLIED PHYSICS LETTERS, 2014, 104 (16)
  • [38] Optical properties of Ga2O3 doped ZnO nanoribbons
    Stoehr, M
    Juillaguet, S
    Kyaw, TM
    Wen, JG
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 4, 2005, 2 (04): : 1314 - 1318
  • [39] Atomic-scale characterization of structural and electronic properties of Hf doped β-Ga2O3
    Chmielewski, Adrian
    Deng, Ziling
    Saleh, Muad
    Jesenovec, Jani
    Windl, Wolfgang
    Lynn, Kelvin
    McCloy, John
    Alem, Nasim
    APPLIED PHYSICS LETTERS, 2021, 119 (17)
  • [40] The effect of vacancy defects on the electronic properties of β-Ga2O3
    He, Xiaomin
    Wang, Meng
    Meng, Jiaqi
    Hu, Jichao
    Jiang, Yuquan
    Computational Materials Science, 2022, 215
12345