Temperature-dependent photoluminescence from type-II InSb/InAs quantum dots

被引：0
|
作者：
Lyublinskaya, O.G. [1 ]
Solov'ev, V.A. [1 ]
Semenov, A.N. [1 ]
Meltser, B. Ya. [1 ]
Terent'ev, Ya.V. [1 ]
Prokopova, L.A. [1 ]
Toropov, A.A. [1 ]
Sitnikova, A.A. [1 ]
Rykhova, O.V. [1 ]
Ivanov, S.V. [1 ]
Thonke, K. [2 ]
Sauer, R. [2 ]
机构：
[1] Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
[2] Abteilung Halbleiterphysik, Universität Ulm, 89081 Ulm, Germany
来源：
Journal of Applied Physics | 2006年 / 99卷 / 09期
关键词：
Semiconducting indium;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Temperature-dependent photoluminescence and absoprtion of CdSe quantum dots embedded in PMMA
    Chi, Tran Thi Kim
    Thuy, Ung Thi Dieu
    Liem, Nguyen Quang
    Nam, Man Hoai
    Thanh, Do Xuan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 52 (05) : 1510 - 1513
  • [42] Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
    Klenovsky, P.
    Krapek, V.
    Humlicek, J.
    ACTA PHYSICA POLONICA A, 2016, 129 (1A) : A62 - A65
  • [43] Temperature-dependent broadening of coherent current peaks in InAs double quantum dots
    Olfa Dani
    Robert Hussein
    Johannes C. Bayer
    Sigmund Kohler
    Rolf J. Haug
    Communications Physics, 5
  • [44] Temperature-dependent broadening of coherent current peaks in InAs double quantum dots
    Dani, Olfa
    Hussein, Robert
    Bayer, Johannes C.
    Kohler, Sigmund
    Haug, Rolf J.
    COMMUNICATIONS PHYSICS, 2022, 5 (01)
  • [45] Photoluminescence from low temperature grown InAs/GaAs quantum dots
    Sreenivasan, D.
    Haverkort, J. E. M.
    Eijkemans, T. J.
    Notzel, R.
    APPLIED PHYSICS LETTERS, 2007, 90 (11)
  • [46] Temperature-dependent photoluminescence in coupling structures of CdSe quantum dots and a ZnCdSe quantum well
    Jin, H
    Zhang, LG
    Zheng, ZH
    An, LN
    Lu, YM
    Zhang, JY
    Fan, XW
    Shen, DZ
    CHINESE PHYSICS LETTERS, 2005, 22 (06) : 1518 - 1521
  • [47] Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies
    Chen, T. T.
    Cheng, C. L.
    Chen, Y. F.
    Chang, F. Y.
    Lin, H. H.
    Wu, C. -T.
    Chen, C. -H.
    PHYSICAL REVIEW B, 2007, 75 (03)
  • [48] Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures
    Andrius Rimkus
    Evelina Pozingytė
    Ramūnas Nedzinskas
    Bronislovas Čechavičius
    Julius Kavaliauskas
    Gintaras Valušis
    Lianhe Li
    Edmund H. Linfield
    Optical and Quantum Electronics, 2016, 48
  • [49] Linewidth analysis of the photoluminescence from InAs/GaSb/InAs/AlSb type-II superlattices
    Ongstad, AP
    Dente, GC
    Tilton, ML
    Gianardi, D
    Turner, G
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7896 - 7902
  • [50] Far infrared response of InAs-GaSb type-II quantum dots
    Broido, DA
    Kempa, K
    Rössler, U
    PHYSICA E, 2000, 6 (1-4): : 466 - 469
12345