Temperature-dependent photoluminescence from type-II InSb/InAs quantum dots

被引：0
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作者：
Lyublinskaya, O.G. [1 ]
Solov'ev, V.A. [1 ]
Semenov, A.N. [1 ]
Meltser, B. Ya. [1 ]
Terent'ev, Ya.V. [1 ]
Prokopova, L.A. [1 ]
Toropov, A.A. [1 ]
Sitnikova, A.A. [1 ]
Rykhova, O.V. [1 ]
Ivanov, S.V. [1 ]
Thonke, K. [2 ]
Sauer, R. [2 ]
机构：
[1] Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia
[2] Abteilung Halbleiterphysik, Universität Ulm, 89081 Ulm, Germany
来源：
Journal of Applied Physics | 2006年 / 99卷 / 09期
关键词：
Semiconducting indium;
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摘要：
Journal article (JA)
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