Optical characteristics of GaAsP/GaInP quantum well grown by metal-organic chemical vapor deposition

被引：0
|
作者：
Yuan, Huibo [1 ]
Li, Lin [1 ]
Qiao, Zhongliang [1 ]
Kong, Lingyi [2 ]
Gu, Lei [1 ]
Liu, Yang [1 ]
Dai, Yin [1 ]
Li, Te [1 ]
Zhang, Jing [1 ]
Qu, Yi [1 ]
机构：
[1] National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
[2] AIXTRON China Limited, Shanghai 200052, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2014年 / 41卷 / 05期
关键词：
Semiconductor quantum wells - III-V semiconductors - Industrial chemicals - Metallorganic chemical vapor deposition - Organic chemicals - Growth temperature - Organometallics - Luminescence;
D O I：
10.3788/CJL201441.0506002
中图分类号：
学科分类号：
摘要：
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