Optical characteristics of GaAsP/GaInP quantum well grown by metal-organic chemical vapor deposition

被引：0

作者：

Yuan, Huibo ^{[1
]}

Li, Lin ^{[1
]}

Qiao, Zhongliang ^{[1
]}

Kong, Lingyi ^{[2
]}

Gu, Lei ^{[1
]}

Liu, Yang ^{[1
]}

Dai, Yin ^{[1
]}

Li, Te ^{[1
]}

Zhang, Jing ^{[1
]}

Qu, Yi ^{[1
]}

机构：

[1] National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China

[2] AIXTRON China Limited, Shanghai 200052, China

来源：

Zhongguo Jiguang/Chinese Journal of Lasers | 2014年 / 41卷 / 05期

关键词：

Semiconductor quantum wells - III-V semiconductors - Industrial chemicals - Metallorganic chemical vapor deposition - Organic chemicals - Growth temperature - Organometallics - Luminescence;

D O I：

10.3788/CJL201441.0506002

中图分类号：

学科分类号：

摘要：

引用

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