Characterization and reliability study of low temperature hermetic wafer level bonding using In/Sn interlayer and Cu/Ni/Au metallization

被引：0
|
作者：
Yu, Da-Quan [1 ]
Lee, Chengkuo [1 ,2 ]
Yan, Li Ling [1 ]
Thew, Meei Ling [1 ]
Lau, John H. [1 ]
机构：
[1] Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Pk. Road, Singapore Science Pk. II, Singapore, 117685, Singapore
[2] Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore
来源：
Journal of Alloys and Compounds | 2009年 / 485卷 / 1-2期
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摘要：
Journal article (JA)
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页码：444 / 450
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