Performance of GaN metal-oxide-semiconductor field-effect transistor with regrown n+-source/drain on a selectively etched GaN

被引：0
|
作者：
Kim, Do-Kywn [1 ]
Kim, Dong-Seok [1 ]
Chang, Sung-Jae [2 ]
Lee, Chang-Ju [1 ]
Bae, Youngho [3 ]
Cristoloveanu, Sorin [2 ]
Lee, Jung-Hee [1 ]
Hahm, Sung-Ho [1 ]
机构：
[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
[2] IMEP-LAHC, Grenoble Institute of Technology, Minatec, BP 257, 38016 Grenoble Cedex 1, France
[3] Department of Electronic Engineering, Uiduk University, Gyeongju 780-713, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 6 PART 1期
关键词：
A3. metal organic chemical vapor deposition (MOCVD) - Current drivability - Electrical characteristic - Field-effect mobilities - Impurity scattering - Mobility degradation - Sapphire substrates - Saturation drain current;
D O I：
061001
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
    Chen Hai-Feng
    Guo Li-Xin
    Zheng Pu-Yang
    Dong Zhao
    Zhang Qian
    CHINESE PHYSICS B, 2015, 24 (07)
  • [32] Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
    陈海峰
    过立新
    郑璞阳
    董钊
    张茜
    Chinese Physics B, 2015, 24 (07) : 597 - 602
  • [33] Other transistor: Early history of the metal-oxide-semiconductor field-effect transistor
    Coll. of Engineering and Mathematics, University of Vermont, 109 Votey Building, Burlington, VT 05405-0156, United States
    Eng Sci Educ J, 5 (233-240):
  • [34] Reliability of GaN metal semiconductor field-effect transistor at high temperature
    Yoshida, S
    Suzuki, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A): : L482 - L483
  • [35] Modification of drain current on metal-oxide-semiconductor field-effect transistor by magnetic field induced by remanent magnetization
    Wakiya, N
    Shimizu, K
    Mizukami, S
    Shinozaki, K
    Mizutani, N
    APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3772 - 3774
  • [36] Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
    Lin, HC
    Wang, MF
    Hou, FJ
    Liu, JT
    Huang, TY
    Sze, SM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (6A): : L626 - L628
  • [37] Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
    Ghoneim, H.
    Knoch, J.
    Riel, H.
    Webb, D.
    Bjoerk, M. T.
    Karg, S.
    Loertscher, E.
    Schmid, H.
    Riess, W.
    APPLIED PHYSICS LETTERS, 2009, 95 (21)
  • [38] Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
    Ito, Kenji
    Tomita, Kazuyoshi
    Kikuta, Daigo
    Horita, Masahiro
    Narita, Tetsuo
    Journal of Applied Physics, 2021, 129 (08):
  • [39] Analysis of channel mobility in GaN-based metal-oxide-semiconductor field-effect transistors
    Ito, Kenji
    Tomita, Kazuyoshi
    Kikuta, Daigo
    Horita, Masahiro
    Narita, Tetsuo
    JOURNAL OF APPLIED PHYSICS, 2021, 129 (08)
  • [40] Normally-Off AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
    Kim, Dong-Seok
    Im, Ki-Sik
    Kang, Hee-Sung
    Kim, Ki-Won
    Bae, Sung-Bum
    Mun, Jae-Kyoung
    Nam, Eun-Soo
    Lee, Jung-Hee
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (03)
12345