Performance of GaN metal-oxide-semiconductor field-effect transistor with regrown n+-source/drain on a selectively etched GaN

被引：0

作者：

Kim, Do-Kywn ^{[1
]}

Kim, Dong-Seok ^{[1
]}

Chang, Sung-Jae ^{[2
]}

Lee, Chang-Ju ^{[1
]}

Bae, Youngho ^{[3
]}

Cristoloveanu, Sorin ^{[2
]}

Lee, Jung-Hee ^{[1
]}

Hahm, Sung-Ho ^{[1
]}

机构：

[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of

[2] IMEP-LAHC, Grenoble Institute of Technology, Minatec, BP 257, 38016 Grenoble Cedex 1, France

[3] Department of Electronic Engineering, Uiduk University, Gyeongju 780-713, Korea, Republic of

来源：

Japanese Journal of Applied Physics | 2013年 / 52卷 / 6 PART 1期

关键词：

A3. metal organic chemical vapor deposition (MOCVD) - Current drivability - Electrical characteristic - Field-effect mobilities - Impurity scattering - Mobility degradation - Sapphire substrates - Saturation drain current;

D O I：

061001

中图分类号：

学科分类号：

摘要：

引用

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