Performance of GaN metal-oxide-semiconductor field-effect transistor with regrown n+-source/drain on a selectively etched GaN

被引：0
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作者：
Kim, Do-Kywn [1 ]
Kim, Dong-Seok [1 ]
Chang, Sung-Jae [2 ]
Lee, Chang-Ju [1 ]
Bae, Youngho [3 ]
Cristoloveanu, Sorin [2 ]
Lee, Jung-Hee [1 ]
Hahm, Sung-Ho [1 ]
机构：
[1] School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea, Republic of
[2] IMEP-LAHC, Grenoble Institute of Technology, Minatec, BP 257, 38016 Grenoble Cedex 1, France
[3] Department of Electronic Engineering, Uiduk University, Gyeongju 780-713, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2013年 / 52卷 / 6 PART 1期
关键词：
A3. metal organic chemical vapor deposition (MOCVD) - Current drivability - Electrical characteristic - Field-effect mobilities - Impurity scattering - Mobility degradation - Sapphire substrates - Saturation drain current;
D O I：
061001
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学科分类号：
摘要：
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