Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration

被引：0

作者：

Ossikovski, Razvigor ^{[1
]}

Nguyen, Quang ^{[1
]}

Picardi, Gennaro ^{[1
]}

Schreiber, Joachim ^{[2
]}

机构：

[1] LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France

[2] Raman Division, HORIBA Jobin Yvon SAS, 231 Rue de Lille, 59650 Villeneuve d'Ascq, France

来源：

Journal of Applied Physics | 2008年 / 103卷 / 09期

关键词：

Semiconductor materials;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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