Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration

被引：0
|
作者：
Ossikovski, Razvigor [1 ]
Nguyen, Quang [1 ]
Picardi, Gennaro [1 ]
Schreiber, Joachim [2 ]
机构：
[1] LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France
[2] Raman Division, HORIBA Jobin Yvon SAS, 231 Rue de Lille, 59650 Villeneuve d'Ascq, France
来源：
Journal of Applied Physics | 2008年 / 103卷 / 09期
关键词：
Semiconductor materials;
D O I：
暂无
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学科分类号：
摘要：
Journal article (JA)
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