780 nm InGaAsP/InGaP/AlGaAs high power semiconductor laser

被引：0
|
作者：
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China [1 ]
不详 [2 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2006年 / 9卷 / 1621-1624期
关键词：
12;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] High reliable -: High power AlGaAs/GaAs 808 nm diode laser bars
    Huelsewede, R.
    Schulze, H.
    Sebastian, J.
    Schroeder, D.
    Meusel, J.
    Hennig, P.
    HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V, 2007, 6456
  • [32] High-power, reliable operation of 730 nm AlGaAs laser diodes
    Singh, R
    Bull, D
    Dabkowski, FP
    Clausen, E
    Chin, AK
    APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2002 - 2004
  • [33] High-power, reliable operation of 730 nm AlGaAs laser diodes
    Laser Diode Mfg. and Development, Polaroid Corporation, MS:NI-IC, 1 Upland Road, Norwood, MA 02062, United States
    Appl Phys Lett, 14 (2002-2004):
  • [34] Study on high power InGaAsP/InGaP/GaAs SCH SQW lasers
    Li, Zhonghui
    Gao, Xin
    Li, Mei
    Wang, Ling
    Zhang, Xingde
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2003, 23 (01): : 11 - 13
  • [35] Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate
    Cho, YH
    Choe, BD
    Lim, H
    APPLIED PHYSICS LETTERS, 1996, 69 (24) : 3740 - 3742
  • [36] Reliable high power InGaAs/AlGaAs (915nm) laser diodes
    He, X
    Mitchell, C
    Srinivasan, S
    Patel, R
    ELECTRONICS LETTERS, 1997, 33 (16) : 1416 - 1418
  • [37] Simulation and experiment results of high power DFB diode laser linewidth power product at 780 nm
    Nguyen, T-P.
    Wenzel, H.
    Wicht, A.
    Tien, T. Q.
    Traenkle, G.
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,
  • [38] 10000-HOURS CW OPERATION OF 780NM HIGH-POWER ALGAAS LASER WITH THIN-TAPERED THICKNESS ACTIVE LAYER
    SHIMA, A
    SAITO, H
    MATSUBARA, H
    KUMABE, H
    ELECTRONICS LETTERS, 1989, 25 (19) : 1290 - 1291
  • [39] Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate
    Appl Phys Lett, 24 (3740):
  • [40] 12 W high power InGaAsP/AlGaInP 755 nm quantum well laser
    Hu, H. Martin
    Zhao, Jianyang
    Wang, Weimin
    Ho, James
    Kuang, Langxing
    Liu, Wenbin
    CHINESE OPTICS LETTERS, 2019, 17 (06)
12345