780 nm InGaAsP/InGaP/AlGaAs high power semiconductor laser

被引：0
|
作者：
Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China [1 ]
不详 [2 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2006年 / 9卷 / 1621-1624期
关键词：
12;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser
    Cao Yu-Lian
    Lian Peng
    Ma Wen-Quan
    Wang Qing
    Wu Xu-Ming
    He Guo-Rong
    Li Hui
    Wang Xiao-Dong
    Song Guo-Feng
    Chen Liang-Hui
    CHINESE PHYSICS LETTERS, 2006, 23 (09) : 2583 - 2586
  • [22] Stable operation of InGaAs/InGaP/AlGaAs (lambda=1020 nm) laser diodes
    Erbert, G
    Beister, G
    Bugge, F
    Maege, J
    Ressel, P
    Sebastian, J
    Vogel, K
    Wenzel, H
    Weyers, M
    ELECTRONICS LETTERS, 1997, 33 (09) : 778 - 779
  • [23] High-Voltage 1064 nm InGaAsP Multijunction Laser Power Converters
    Yin, Jiajing
    Sun, Yurun
    Wang, Ancheng
    Yu, Shuzhen
    Wang, Junsheng
    Fu, Qiuxue
    Qin, Jie
    Han, Yanhui
    Zhang, Wei
    Zhang, Shuming
    Xue, Cong
    Dong, Jianrong
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (08) : 1291 - 1294
  • [24] 980nm InGaAs/AlGaAs Quantum Well High Power Semiconductor Laser with Narrow Vertical Divergence Angle
    Qiao, Zhongliang
    XiangLi
    Liu, Chongyang
    ZecenZhang
    Meng, Qianqian
    Li, Te
    Zhang, Jing
    Li, Zhanguo
    Li, Lin
    Ma, Xiaohui
    Qu, Yi
    Gao, Xin
    BaoxueBo
    Wang, Hong
    2015 INTERNATIONAL CONFERENCE ON OPTOELECTRONICS AND MICROELECTRONICS (ICOM), 2015, : 375 - 378
  • [25] UNIFORM AND HIGH-POWER CHARACTERISTICS OF 780-NM ALGAAS TQW LASER-DIODES FABRICATED BY LARGE-SCALE MOCVD
    SHIMA, A
    MIYASHITA, M
    MIURA, T
    KADOWAKI, T
    HAYAFUJI, N
    AIGA, M
    SUSAKI, W
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (01) : 24 - 30
  • [26] INGAASP/INGAP BURIED HETEROSTRUCTURE LASERS AT 810 NM
    WAKAO, K
    ISOZUMI, S
    NISHI, H
    OHSAKA, S
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (11) : 3086 - 3087
  • [27] Single-mode amplitude squeezing in a semiconductor laser at 780 nm
    Fofanov, YA
    Sokolov, IV
    OPTICS AND SPECTROSCOPY, 2001, 91 (04) : 519 - 525
  • [28] High Power 1060 nm Distributed Feedback Semiconductor Laser
    Zhai Teng
    Tan Shao-Yang
    Lu Dan
    Wang Wei
    Zhang Rui-Kang
    Ji Chen
    CHINESE PHYSICS LETTERS, 2014, 31 (02)
  • [29] Single-mode amplitude squeezing in a semiconductor laser at 780 nm
    Ya. A. Fofanov
    I. V. Sokolov
    Optics and Spectroscopy, 2001, 91 : 519 - 525
  • [30] High-power 970 nm semiconductor disk laser
    Zhang, Zhicheng
    Xiao, Yao
    Wang, Jun
    Miao, Pei
    Liu, Heng
    Cheng, Yang
    Gou, Yudan
    Wang, Sha
    Deng, Guoliang
    Zhou, Shouhuan
    OPTICS EXPRESS, 2023, 31 (26) : 43963 - 43974
12345