An efficient numerical method of DC modeling for power MOSFET, MESFET and AlGaN/GaN HEMT

被引：0
|
作者：
Rahman, Touhidur [1 ]
Huque, Mohammad A. [1 ]
Islam, Syed K. [1 ]
机构：
[1] Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996-2100, United States
来源：
International Journal of High Speed Electronics and Systems | 2008年 / 18卷 / 04期
关键词：
D O I：
10.1142/S0129156408005801
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：825 / 840
相关论文
共 50 条
  • [41] Comparative Study and Modeling of AlGaN/GaN Heterostructure HEMT and MOSHEMT Biosensors
    Bouguenna, Abdellah
    Bouguenna, Driss
    Stambouli, Amine Boudghene
    Bhat, Aasif Mohammad
    INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2023, 16 (03): : 511 - 522
  • [42] Modeling and Simulation of AlGaN/GaN MOS-HEMT for Biosensor Applications
    Pal, Praveen
    Pratap, Yogesh
    Gupta, Mridula
    Kabra, Sneha
    IEEE SENSORS JOURNAL, 2019, 19 (02) : 587 - 593
  • [43] Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag
    Ramanan, Narayanan
    Lee, Bongmook
    Misra, Veena
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (06) : 2012 - 2018
  • [44] NEURAL MODELING APPROACH FOR TRAPPING AND THERMAL EFFECTS ON ALGAN/GAN HEMT
    Elhamadi, Taj-Eddin
    Boussouis, Mohamed
    Touhami, Naima Amar
    Lamsalli, Mohammed
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017, 59 (05) : 1140 - 1142
  • [45] AlGaN/GaN Power HEMT Devices for Future Energy Conversion Applications
    Liang, Yung C.
    Samudra, Ganesh S.
    Huang, Huolin
    Huang, Chih-Fang
    Chang, Ting-Fu
    IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS 2013 (ISNE 2013), 2013,
  • [46] Power limits of polarization-induced AlGaN/GaN HEMT's
    Eastman, LF
    Green, B
    Smart, J
    Tilak, V
    Chumbes, E
    Kim, H
    Prunty, T
    Weimann, N
    Dimitrov, R
    Ambacher, O
    Schaff, WJ
    Shealy, JR
    2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2000, : 242 - 246
  • [47] Polarization dependent analysis of AlGaN/GaN HEMT for high power applications
    Gangwani, Parvesh
    Pandey, Sujata
    HaIdar, Subhasis
    Gupta, Mridula
    Gupta, R. S.
    SOLID-STATE ELECTRONICS, 2007, 51 (01) : 130 - 135
  • [48] 600V AlGaN/GaN Power-HEMT: Design, fabrication and demonstration on high voltage DC-DC converter
    Saito, W
    Takada, Y
    Kuraguchi, M
    Tsuda, K
    Omura, I
    Ogura, T
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 587 - 590
  • [49] Heteroepitaxial Growth and Power Electronics using AlGaN/GaN HEMT on Si
    Egawa, Takashi
    2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2012,
  • [50] An improved DRBL AlGaN/GaN HEMT with high power added efficiency
    Jia, Hujun
    Zhu, Shunwei
    Hu, Mei
    Tong, Yibo
    Li, Tao
    Yang, Yintang
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 89 : 212 - 215
12345