An efficient numerical method of DC modeling for power MOSFET, MESFET and AlGaN/GaN HEMT

被引：0
|
作者：
Rahman, Touhidur [1 ]
Huque, Mohammad A. [1 ]
Islam, Syed K. [1 ]
机构：
[1] Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN 37996-2100, United States
来源：
International Journal of High Speed Electronics and Systems | 2008年 / 18卷 / 04期
关键词：
D O I：
10.1142/S0129156408005801
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：825 / 840
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