Dynamic and temperature effects in toggle magnetic random access memory

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作者：
Cimpoesu, Dorin [1 ]
Stancu, Alexandru [2 ]
Spinu, Leonard [3 ]
机构：
[1] Advanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United States
[2] Faculty of Physics, Al. I. Cuza University, Iasi 700506, Romania
[3] Department of Physics, University of New Orleans, New Orleans, LA 70148
来源：
Journal of Applied Physics | 2007年 / 102卷 / 01期
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