Dynamic and temperature effects in toggle magnetic random access memory
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作者:
Cimpoesu, Dorin
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Advanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United StatesAdvanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United States
Cimpoesu, Dorin
[1
]
Stancu, Alexandru
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Faculty of Physics, Al. I. Cuza University, Iasi 700506, RomaniaAdvanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United States
Stancu, Alexandru
[2
]
Spinu, Leonard
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Department of Physics, University of New Orleans, New Orleans, LA 70148Advanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United States
Spinu, Leonard
[3
]
机构:
[1] Advanced Materials Research Institute (AMRI), University of New Orleans, New Orleans, LA 70148, United States
[2] Faculty of Physics, Al. I. Cuza University, Iasi 700506, Romania
[3] Department of Physics, University of New Orleans, New Orleans, LA 70148