Properties of InGaN films grown by reactive sputtering

被引：0
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作者：
Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan [1 ]
不详 [2 ]
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来源：
Jpn. J. Appl. Phys. | / 8 PART 1卷
关键词：
Compendex;
D O I：
081203
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学科分类号：
摘要：
III-V semiconductors
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