Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate

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作者：
Loke, W.K. [1 ]
Yoon, S.F. [1 ]
Wicaksono, S. [1 ]
Tan, K.H. [1 ]
Lew, K.L. [1 ]
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
来源：
Journal of Applied Physics | 2007年 / 102卷 / 05期
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