All-ion-implanted single crystalline silicon solar cells up to efficiency of 19.1%

The all-ion-implanted single crystalline silicon solar cell with the phosphorous-implanted emitter and boron-implanted back surface field (BSF) was prepared based on the PESC structure. The annealing properties and the doping profiles for the implanted phosphorous and boron, and the effect of boron-implanted BSF on the solar cell performance were analyzed. Additionally, the solar cell was compared with solar cell with conventional POCl3 diffused emitter. The results show that the boron-implanted BSF improves long-wavelength response, and makes the open circuit voltage increase by 100 mV and the efficiency increase by 5.4%. The phosphorous-implanted emitter improves the short-wavelength response and makes the efficiency increase by 0.8% absolutely. The efficiency of all-ion-implanted solar cells reaches up to 19.1%. ©, 2015, Science Press. All right reserved.