All-ion-implanted single crystalline silicon solar cells up to efficiency of 19.1%

被引：0

作者：

Fan, Yujie ^{[1
]}

Han, Peide ^{[1
]}

Liang, Peng ^{[1
]}

Xing, Yupeng ^{[1
]}

Ye, Zhou ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing,100083, China

来源：

Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2015年 / 36卷 / 04期

关键词：

Annealing properties - Back surface fields - Efficiency increase - Emitter - Long wavelength - Short wavelengths - Single crystalline silicon - Solar cell performance;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The all-ion-implanted single crystalline silicon solar cell with the phosphorous-implanted emitter and boron-implanted back surface field (BSF) was prepared based on the PESC structure. The annealing properties and the doping profiles for the implanted phosphorous and boron, and the effect of boron-implanted BSF on the solar cell performance were analyzed. Additionally, the solar cell was compared with solar cell with conventional POCl3 diffused emitter. The results show that the boron-implanted BSF improves long-wavelength response, and makes the open circuit voltage increase by 100 mV and the efficiency increase by 5.4%. The phosphorous-implanted emitter improves the short-wavelength response and makes the efficiency increase by 0.8% absolutely. The efficiency of all-ion-implanted solar cells reaches up to 19.1%. ©, 2015, Science Press. All right reserved.

引用

页码：829 / 834

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